| PART |
Description |
Maker |
| IBMN625804GT3B IBMN625404GT3B |
256Mb Double Data Rate Synchronous DRAM(256M位双数据速率同步动态RAM)
|
IBM Microeletronics
|
| K5D5657ACM-F015 |
256Mb NAND and 256Mb Mobile SDRAM 256Mb的NAND闪存56Mb移动SDRAM
|
Samsung Semiconductor Co., Ltd.
|
| HY5DU561622DTP HY5DU561622DLTP HY5DU561622DLTP-K H |
DDR SDRAM - 256Mb
256M DDR SDRAM (268,435,456-bit CMOS Double Data Rate(DDR) Synchronous DRAM)
|
HYNIX[Hynix Semiconductor]
|
| W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
| 3TB41-15 |
TB Series Basic Switch, Double Pole Double Throw Double Break Circuitry, 10 A at 250 Vac, Pin Plunger Actuator, Silver Contacts, Screw Termination
|
Honeywell
|
| ISS-8 |
VDE-insulated Allen wrench with double-layer insulation, for double the safety
|
PHOENIX CONTACT
|
| BD11600NUX BD11601NUX |
USB Switch ICs DPDT Type (Double Pole Double Throw)
|
Rohm
|
| NX3DV42GM NX3DV42GU |
Dual high-speed USB 2.0 double-pole double-throw analog
|
NXP Semiconductors
|
| 1300940223 |
Standard Duty Support Grip, Double Eye, Closed Mesh, Double Weave
|
Molex Electronics Ltd.
|
